Application of AlAs-GaAs superlattices to step-index and graded-index waveguide separate-confinement heterostructure laser diodes

Journal Article · Wed Oct 15 00:00:00 EDT 1986 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.337103· OSTI ID:5055187

Tokuda, Y; Ohta, Y N; Fujiwara, K; Nakayama, T

AlAs-GaAs superlattices were utilized for the waveguides in separate-confinement heterostructure laser diodes. A significantly low threshold current density J/sub th/ of 200 A/cm/sup 2/ was achieved at a cavity length of about 500 ..mu..m for a graded-index superlattice-waveguide separate-confinement heterostructure laser diode. By photoluminescence measurements taken under a direct excitation condition, it was clearly demonstrated that the advantage of using the superlattice waveguide, i.e., the reduction of J/sub th/ value, is due to the improvement of heterointerface quality of the GaAs active layer. Moreover, a result on an all-binary SCH laser composed of the only AlAs and GaAs revealed that the J/sub th/ as considerably low as 400 A/cm/sup 2/ was achieved at a cavity length of 400 ..mu..m.

• Research Organization: Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661, Japan
• OSTI ID: 5055187
• Journal Information: J. Appl. Phys.; (United States), Vol. 60:8
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
PHOTOLUMINESCENCE
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
CURRENT DENSITY
THRESHOLD CURRENT
WAVEGUIDES
SUPERLATTICES
EXPERIMENTAL DATA
HETEROJUNCTIONS
LASER CAVITIES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
LUMINESCENCE
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420300* - Engineering- Lasers- (-1989)