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Chemically prepared PZT films doped with niobium

Conference ·
OSTI ID:5053432

We report on the first ferroelectric measurements of chemically prepared thin films of PZT containing niobium, (PNZT). Polycrystalline, perovskite PNZT thin films were fabricated by spin coating Pt coated SiO{sub 2}/Si substrates with alkoxide solutions. We systematically doped our base composition, PZT 53/47, with niobium (0 to 10 at.%). Further compositional modifications included the variation of Zr/Ti ratio for films containing 2 at.% Nb. The dielectric constants measured for PNZT 2/56/44, 2/53/47 and 2/48/52 films were in good agreement with bulk values. Dielectric constants on the order of 700, 1000 and 500, respectively, were measured for these three films. Both linear and nonlinear current-voltage behavior was observed for our Pt/PNZT/Pt device structures, depending on the amplitude of the applied voltage and the temperature of measurement. We were able to make ferroelectric films of PNZT 2/53/47 (2 at.% Nb doping) with spontaneous polarizations of 0.2 C/m{sup 2} and coercive fields of 2.5 MV/m. PNZT films containing larger niobium additions (5 and 10 at.%) had inferior ferroelectric properties because of the presence of nonperovskite phases. 8 refs., 5 figs.

Research Organization:
Sandia National Labs., Albuquerque, NM (USA)
Sponsoring Organization:
DOE/DP
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5053432
Report Number(s):
SAND-89-1480C; CONF-8910120--7; ON: DE90006811
Country of Publication:
United States
Language:
English