Low-band-gap, amorphous-silicon-based alloys by photochemical vapor deposition: Final report, 1 October 1985--30 November 1986

Technical Report · Mon Feb 01 04:00:00 EST 1988

OSTI ID:5046475

Baron, B N; Hegedus, S S; Jackson, S C

Thin films of hydrogenated amorphous silicon-germanium alloys were deposited by mercury-sensitized photochemical vapor deposition using a novel photo-CVD reactor. Thin films of a-Si/sub 1-x/Ge/sub x/:H with 0 less than or equal to x less than or equal to 1 and 1.0 less than E/sub g/ less than 1.8 eV were deposited from mixtures of silane and disilane with germane and inert gas diluents at substrate temperatures from 160/degree/ to 200/degree/C. Alloy films were characterized by measurements of photo- and dark conductivity, electron mobility-lifetime product, sub-band-gap absorption, and density of states. Dilution with hydrogen increased the photoconductivity to 10/sup /minus/5/ Scm and mobility-lifetime product to 6 /times/ 10/sup /minus/8/ cm/sup 2/V for alloys having a band gap of 1.4 eV.

• Research Organization: Delaware Univ., Newark (USA). Inst. of Energy Conversion
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 5046475
• Report Number(s): SERI/STR-211-3214; ON: DE88001165
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
AMORPHOUS STATE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EQUIPMENT
GERMANIUM ALLOYS
HYDRIDES
HYDROGEN COMPOUNDS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOCONDUCTIVITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SILANES
SILICON ALLOYS
SILICON COMPOUNDS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING