Reflection symmetry at a B=0 metal-insulator transition in two dimensions

Journal Article · Thu May 01 04:00:00 EDT 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.55.R13421· OSTI ID:503721

Simonian, D; Kravchenko, S V; Sarachik, M P ^[1]

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1. Physics Department, City College of the City University of New York, New York, New York 10031 (United States)

We report a remarkable symmetry between the resistivity and conductivity on opposite sides of the B=0 metal-insulator transition in a two-dimensional electron gas in high-mobility silicon metal-oxide-semiconductor field-effect transistors. This symmetry implies that the transport mechanisms on the two sides are related. {copyright} {ital 1997} {ital The American Physical Society}

• DOE Contract Number: FG02-84ER45153
• OSTI ID: 503721
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 20 Vol. 55; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRIC CONDUCTIVITY
MOSFET
PHASE TRANSFORMATIONS
SILICON
SYMMETRY
TEMPERATURE RANGE 0000-0013 K