Response to parallel magnetic field of a dilute two-dimensional electron system across the metal-insulator transition

Journal Article · Sun Aug 01 04:00:00 EDT 1999 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.60.R5093· OSTI ID:362706

Mertes, K M; Simonian, D; Sarachik, M P ^[1]; Kravchenko, S V ^[2]; Klapwijk, T M ^[3]

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1. Physics Department, City College of the City University of New York, New York, New York 10031 (United States)
2. Physics Department, Northeastern University, Boston, Massachusetts 02115 (United States)
3. Department of Applied Physics, Delft University of Technology, 2628 CJ Delft (The Netherlands)

The response to a parallel magnetic field of the very dilute insulating two-dimensional system of electrons in silicon metal-oxide-semiconductor field-effect transistors is dramatic and similar to that found on the conducting side of the metal-insulator transition: there is a large initial increase in resistivity with increasing field, followed by saturation to a value that is approximately constant above a characteristic magnetic field of about 1 T. This is unexpected behavior in an insulator that exhibits Efros-Shklovskii variable-range hopping in zero field, and appears to be a general feature of very dilute electron systems. {copyright} {ital 1999} {ital The American Physical Society}

• OSTI ID: 362706
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 8 Vol. 60; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ELECTRIC CONDUCTIVITY
ELECTRON DENSITY
ELECTRON MOBILITY
HALL EFFECT
MAGNETIC FIELDS
MOSFET
SILICON