Metal-insulator transition in quasi-two-dimensional Mo-C films

Journal Article · Sun Nov 15 04:00:00 EST 1992 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.46.12695· OSTI ID:7051386

Lee, S J; Ketterson, J B ^[1]; Trivedi, N ^[2]

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1. Physics and Astronomy Department and Materials Research Center, Northwestern University, Evanston, Illinois 60208 (United States)
2. Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States)

We have studied the insulator-to-metal transition in Mo-C films by tuning the thickness from 2.6 to 20 A. The temperature dependence of the conductivity evolves from hopping transport, for the thin insulating films, to a ln{ital T} dependence for the thicker metallic films. In the insulating regime we find a variable range Mott hopping law at high temperatures crossing over to Efros-Shklovskii hopping at lower temperatures with the opening of a soft Coulomb gap. We also obtain the dependence of the characteristic parameters on the film thickness.

• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 7051386
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 46:19; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
CARBON
DIMENSIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
FILMS
METALS
MOLYBDENUM
NONMETALS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
TEMPERATURE EFFECTS
THICKNESS
THIN FILMS
TRANSITION ELEMENTS