Electric Field Scaling at a {ital B={bold 0}} Metal-Insulator Transition in Two Dimensions

Journal Article · Sun Dec 01 04:00:00 EST 1996 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.77.4938· OSTI ID:399897

Kravchenko, S V; Simonian, D; Sarachik, M P ^[1]; Mason, W; Furneaux, J E ^[2]

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1. Physics Department, City College of the City University of New York, New York, New York 10031 (United States)
2. Laboratory for Electronic Properties of Materials and Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019 (United States)

The nonlinear (electric field-dependent) resistivity of the 2D electron system in silicon exhibits scaling as a function of electric field and electron density in both the metallic and insulating phases, providing further evidence for a true metal-insulator transition in this 2D system at {ital B}=0. Comparison with the temperature scaling yields separate determinations of the correlation length exponent, {nu}{approx_equal}1.5, and the dynamical exponent, {ital z}{approx_equal}0.8, close to the theoretical value {ital z}=1. {copyright} {ital 1996 The American Physical Society.}

• DOE Contract Number: FG02-84ER45153
• OSTI ID: 399897
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 24 Vol. 77; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELD EFFECTS
ELECTRIC FIELDS
ELECTRON DENSITY
METAL-INSULATOR TRANSFORMATIONS
NONLINEAR PROBLEMS
SCALING
SILICON
TEMPERATURE DEPENDENCE
TWO-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL SYSTEMS