Barrier-layer-thickness control of selective wet oxidation of AlGaAs for embedded optical elements
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Selective wet oxidation of AlGaAs layers can be used to form embedded optical elements, such as buried lenses and current control apertures in vertical cavity structures. Oxidation rates of buried Al{sub 0.94}Ga{sub 0.06}As layers were controlled by varying the thickness of GaAs barrier layers between layers of Al{sub 0.94}Ga{sub 0.06}As and Al{sub 0.98}Ga{sub 0.02}As. This phenomenon can be attributed to the superposition of a vertical oxidation component due to species diffusing through the barrier layer and a constant lateral oxidation component. The magnitude of the vertical component is controlled by the GaAs barrier thickness, which determines the concentration of additional oxidizing species in the Al{sub 0.94}Ga{sub 0.06}As layer. {copyright} {ital 1997 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 503572
- Journal Information:
- Applied Physics Letters, Vol. 70, Issue 21; Other Information: PBD: May 1997
- Country of Publication:
- United States
- Language:
- English
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