On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

Journal Article · Wed Jul 15 04:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615070258· OSTI ID:22469833

Asryan, L. V. ^[1]; Semenova, E. S. ^[2]; Zubov, F. I.; Kryzhanovskaya, N. V. ^[3]; Maximov, M. V. ^[4]

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1. Virginia Polytechnic Institute and State University, Blacksburg (United States)
2. Technical University of Denmark, Kgs. Lyngby, DTU Fotonik (Denmark)
3. Russian Academy of Sciences, St. Petersburg Academic University, Nanotechnology Research and Education Centre (Russian Federation)
4. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

Band offsets at the heterointerface are calculated for various combinations of InAlGaAs/AlGaAs heteropairs that can be synthesized on GaAs substrates in the layer-by-layer pseudomorphic growth mode. Patterns which make it possible to obtain an asymmetric barrier layer providing the almost obstruction-free transport of holes and the highest possible barrier height for electrons are found. The optimal compositions of both compounds (In{sup 0.232}Al{sup 0.594}Ga{sup 0.174}As/Al{sup 0.355}Ga{sup 0.645}As) at which the flux of electrons across the barrier is at a minimum are determined with consideration for the critical thickness of the indium-containing quaternary solid solution.

• OSTI ID: 22469833
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 49; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ASYMMETRY
DEPLETION LAYER
ELECTRONS
GALLIUM ARSENIDES
HETEROJUNCTIONS
HOLES
INDIUM COMPOUNDS
INTERFACES
LASERS
OPTIMIZATION
SOLID SOLUTIONS
SUBSTRATES