Strain relaxation and defect reduction in In{sub x}Ga{sub 1-x}As/GaAs by lateral oxidation of an underlying AlGaAs layer
Journal Article
·
· Journal of Applied Physics
The strain relaxation in In{sub 0.25}Ga{sub 0.75}As and In{sub 0.4}Ga{sub 0.6}As grown on GaAs substrates at low temperature has been studied before and after laterally oxidizing an underlying Al{sub 0.98}Ga{sub 0.02}As layer. The relaxation as a function of layer thickness has been measured by cross-sectional transmission electron microscopy and x-ray analysis. It is found that oxidation of the Al{sub 0.98}Ga{sub 0.02}As layer improves the relaxation of the strained In{sub x}Ga{sub 1-x}As layer. Moreover, the interfacial misfit dislocations have been removed, and the threading dislocation density has decreased approximately by one order of magnitude after oxidation.
- Sponsoring Organization:
- (US)
- OSTI ID:
- 40204967
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 88; ISSN 0021-8979
- Publisher:
- The American Physical Society
- Country of Publication:
- United States
- Language:
- English
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