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U.S. Department of Energy
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Advanced surface processes for optoelectronics

Conference ·
OSTI ID:5035677
 [1];  [2];  [3]
  1. Princeton Univ., NJ (USA)
  2. Bellcore, Red Bank, NJ (US)
  3. AT and T Bell Labs., Murray Hill, NJ (USA)
The field of opto-electronics is advancing at a rapid pace with the discovery of novel material systems as well as new processing ideas. The last decade has seen the maturing of technologies such as ion implantation of opto-electronic materials, energetic-beam processing of surfaces, epitaxy and heteroepitaxy of lattice matched and non-lattice matched systems, and novel growth techniques such as chemical beam epitaxy and energetic-beam assisted growth. The field has further benefited from understanding metal surface reactions to form controlled barriers, and the development of techniques to fabricate sub-micron structures both above and below the surfaces of solids. The aim of this symposium was to bring together the diverse group of researchers involved in these fields.
OSTI ID:
5035677
Report Number(s):
CONF-8804226--; ISBN: 0-931837-96-0
Country of Publication:
United States
Language:
English