Evaluation of AlO sub x barrier thickness in Nb Josephson junctions using anodization profiles

Journal Article · Sun Dec 10 23:00:00 EST 1989 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.101978· OSTI ID:5035658

Imamura, T; Hasuo, S ^[1]

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1. Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan (JP)

Using anodization profiles, we have analyzed the thin AlO{sub {ital x}}-Al tunneling barrier in a Nb/AlO{sub {ital x}}-Al/Nb Josephson junction. We measured the voltage width at the AlO{sub {ital x}}-Al barrier in the profiles and found that it is closely related to the AlO{sub {ital x}}-Al thickness. We proposed a way to evaluate this thickness from the voltage width. The anodization profile is useful in diagnosing the 4.2 K critical current density of Josephson junctions even at room temperature.

• OSTI ID: 5035658
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 55:24; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

426001* -- Engineering-- Superconducting Devices & Circuits-- (1990-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
DIMENSIONS
ELECTRIC POTENTIAL
ELEMENTS
JOSEPHSON JUNCTIONS
JUNCTIONS
MEDIUM TEMPERATURE
METALS
MIM JUNCTIONS
NIOBIUM
OXIDES
OXYGEN COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SUPERCONDUCTING JUNCTIONS
THICKNESS
TRANSITION ELEMENTS
TUNNEL EFFECT
ULTRALOW TEMPERATURE