Interface trap effects on the hot-carrier induced degradation of MOSFETS during dynamic stress

Conference · Tue Dec 01 04:00:00 EST 1987 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:5025277

Suehle, J S; Russell, T J; Galloway, K F

Foundry and hardened n-channel MOSFETs were stressed with dynamic AC pulses and with static DC voltages. The pre-radiation hot-carrier induced degradation is identical for devices from both processes when subjected to static stress, but when subjected to dynamic stress, the degradation is much more severe for the hardened devices. The data suggest that the degradation is strongly influenced by the pulse structure and it is proposed that the initial density of interface traps may be responsible for the enhancement in degradation exhibited by the hardened devices following dynamic stress.

• Research Organization: Semiconductor Electronics Div., National Bureau of Standards, Gaithersburg, MD 20899 (US)
• OSTI ID: 5025277
• Report Number(s): CONF-8707112-
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-34:6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
360605 -- Materials-- Radiation Effects
ALTERNATING CURRENT
CURRENTS
DIRECT CURRENT
DYNAMIC LOADS
ELECTRIC CURRENTS
FIELD EFFECT TRANSISTORS
INSTABILITY
PHYSICAL RADIATION EFFECTS
PLASMA INSTABILITY
PLASMA MACROINSTABILITIES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
THERMAL DEGRADATION
TRANSISTORS
TRAPPED-PARTICLE INSTABILITY