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U.S. Department of Energy
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What is Scanning Probe Microscopy? And How Can It Be Used In Failure Analysis?

Journal Article · · Electronics Device Failure Analysis News
OSTI ID:5010

Scanning probe microscopy (SPM) techniques are not suitable as global defect-localization tools. They can, however, pinpoint the exact location of the defects once the approximate locations of the defects have been identified by other failure analysis techniques. SPM techniques also provide information such as 3-D topology, current, surface potential, and 2-D dopant profile that may not be readily obtainable with other techniques. This information, coupled with the unparalleled spatial resolution and high detection sensitivity can be used by failure analysts for root cause analysis.

Research Organization:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
5010
Report Number(s):
SAND99-0710J
Journal Information:
Electronics Device Failure Analysis News, Journal Name: Electronics Device Failure Analysis News
Country of Publication:
United States
Language:
English

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