Metalorganic vapor-phase epitaxy of cubic Al{sub x}Ga{sub 1{minus}x}N alloy on a GaAs (100) substrate

Journal Article · Thu May 01 00:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.119003· OSTI ID:496368

Nakadaira, A; Tanaka, H ^[1]

---

1. NTT Integrated Information Energy Systems Laboratories, 3-9-11, Midori-cho, Musashino-shi, Tokyo 180 (Japan)

Cubic Al{sub x}Ga{sub 1{minus}x}N was grown on a GaAs (100) substrate by using low-pressure metalorganic vapor-phase epitaxy with a GaN buffer layer grown at low and high temperatures. The high-growth{endash}temperature GaN layer improved the quality of the cubic Al{sub x}Ga{sub 1{minus}x}N. Also, the AlN molar fraction could be controlled by changing the carrier gas flow of trimethylaluminum. The Al{sub x}Ga{sub 1{minus}x}N epitaxial layers in the range of 0{le}x{le}0.23 exhibited strong near-band-edge photoluminescence at room temperature. Their photoluminescence peak energies show a linear dependence on the molar fraction. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 496368
• Journal Information: Applied Physics Letters, Vol. 70, Issue 20; Other Information: PBD: May 1997
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM NITRIDES
VAPOR PHASE EPITAXY
ALUMINIUM NITRIDES
ALUMINIUM COMPOUNDS
GALLIUM COMPOUNDS
STOICHIOMETRY
PHOTOLUMINESCENCE
ENERGY GAP
CUBIC LATTICES
THIN FILMS