Optical properties of In{sub x}Ga{sub 1{minus}x}N alloys grown by metalorganic chemical vapor deposition

Journal Article · Thu Oct 01 04:00:00 EDT 1998 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.368669· OSTI ID:659300

Shan, W; Walukiewicz, W; Haller, E E ^[1]; Little, B D; Song, J J ^[2]; McCluskey, M D; Johnson, N M ^[3]; Feng, Z C; Schurman, M; Stall, R A ^[4]

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1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
2. Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078 (United States)
3. Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304 (United States)
4. EMCORE Corporation, 394 Elizobeth Avenue, Somerest, New Jersey 08873 (United States)

We present the results of optical studies of the properties of In{sub x}Ga{sub 1{minus}x}N epitaxial layers (0{lt}x{lt}0.2) grown by metalorganic chemical vapor deposition. The effects of alloying on the fundamental band gap of In{sub x}Ga{sub 1{minus}x}N were investigated using a variety of spectroscopic techniques. The fundamental band-gap energies of the In{sub x}Ga{sub 1{minus}x}N alloys were determined using photomodulation spectroscopy measurements and the variation of the fundamental band gap was measured as a function of temperature. The effects of pressure on the band gap for In{sub x}Ga{sub 1{minus}x}N samples with different alloy concentrations were examined by studying the shift of photoluminescence (PL) emission lines using the diamond-anvil pressure-cell technique. The results show that PL originates from effective-mass conduction-band states. Anomalous temperature dependence of the PL peak shift and linewidth as well as the Stokes shift between photoreflectance and PL lines is explained by composition fluctuations in as-grown InGaN alloys. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 659300
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 84; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL COMPOSITION
CHEMICAL VAPOR DEPOSITION
EFFECTIVE MASS
ENERGY GAP
GALLIUM COMPOUNDS
GALLIUM NITRIDES
INDIUM COMPOUNDS
INDIUM NITRIDES
MODULATION
PHOTOLUMINESCENCE
PRESSURE DEPENDENCE
TEMPERATURE DEPENDENCE