Use of an excimer lamp for photochemical resistless etching of thermal silicon oxide substrate
Book
·
OSTI ID:490886
- Tokai Univ., Hiratsuka, Kanagawa (Japan). Faculty of Electrical Engineering
Photochemical resistless etching was carried out by using a Xe{sub 2}* excimer lamp and a KrF excimer laser. The decomposition method with Xe{sub 2}* excimer lamp increases the decomposition efficiency by 100 times than that of using ArF excimer laser and etchant gas, CHClF{sub 2}. Xe{sub 2}* excimer lamp irradiation allowed decomposition of CHClF{sub 2} gas to produce CF{sub 2} radical with a small quantity of gas. The CF{sub 2} radical was polymerized to form fluorocarbon layer on the SiO{sub 2} substrate. Simultaneously, circuit patterned KrF excimer laser was vertically irradiated the fluorocarbon layer on the substrate for resistless etching. The etching depth was about 1,000 {angstrom}.
- OSTI ID:
- 490886
- Report Number(s):
- CONF-951155-; ISBN 1-55899-300-2; TRN: IM9729%%137
- Resource Relation:
- Conference: Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 27 Nov - 1 Dec 1995; Other Information: PBD: 1996; Related Information: Is Part Of Advanced laser processing of materials -- Fundamentals and applications; Singh, R. [ed.] [Univ. of Florida, Gainesville, FL (United States)]; Norton, D. [ed.] [Oak Ridge National Lab., TN (United States)]; Laude, L. [ed.] [Univ. of Mons-Hainaut, Mons (Belgium)]; Narayan, J. [ed.] [North Carolina State Univ., Raleigh, NC (United States)]; Cheung, J. [ed.] [Rockwell International Science Center, Thousand Oaks, CA (United States)]; PB: 693 p.; Materials Research Society symposium proceedings, Volume 397
- Country of Publication:
- United States
- Language:
- English
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