Use of an excimer lamp for photochemical resistless etching of thermal silicon oxide substrate

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:490886

Kamata, N; Murahara, M ^[1]

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1. Tokai Univ., Hiratsuka, Kanagawa (Japan). Faculty of Electrical Engineering

Photochemical resistless etching was carried out by using a Xe{sub 2}* excimer lamp and a KrF excimer laser. The decomposition method with Xe{sub 2}* excimer lamp increases the decomposition efficiency by 100 times than that of using ArF excimer laser and etchant gas, CHClF{sub 2}. Xe{sub 2}* excimer lamp irradiation allowed decomposition of CHClF{sub 2} gas to produce CF{sub 2} radical with a small quantity of gas. The CF{sub 2} radical was polymerized to form fluorocarbon layer on the SiO{sub 2} substrate. Simultaneously, circuit patterned KrF excimer laser was vertically irradiated the fluorocarbon layer on the substrate for resistless etching. The etching depth was about 1,000 {angstrom}.

• OSTI ID: 490886
• Report Number(s): CONF-951155--; ISBN 1-55899-300-2
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EFFICIENCY
ETCHING
EXPERIMENTAL DATA
FREONS
KRYPTON FLUORIDE LASERS
PHOTOCHEMICAL REACTIONS
PRESSURE DEPENDENCE
SILICON OXIDES
ULTRAVIOLET RADIATION