Muonium Formation via Electron Transport in Silicon

Journal Article · Tue Apr 01 04:00:00 EST 1997 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.78.2835· OSTI ID:490203

Storchak, V ^[1]; Cox, S ^[2]; Cottrell, S ^[3]; Brewer, J; Morris, G ^[4]; Arseneau, D; Hitti, B ^[5]

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1. Kurchatov Institute, Kurchatov Sq.1, Moscow 123182 (Russia)
2. Rutherford Appleton Laboratory, Chilton, Oxfordshire OX11 OQX, United Kingdom, and Department of Physics and Astronomy, University College London, Gower Street, London WC1E 6BT (United Kingdom)
3. Rutherford Appleton Laboratory, Chilton, Oxfordshire OX11OQX (United Kingdom)
4. Canadian Institute for Advanced Research and Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia, V6T 1Z1 (CANADA)
5. TRIUMF, 4004 Wesbrook Mall, Vancouver, British Columbia, V6T 2A3 (CANADA)

We report muon spin rotation measurements in n-type silicon from 10 to 310K in electric fields up to 5kV/cm. These experiments reveal the nature of the partition of neutral muonium centers into {ital normal muonium} (Mu{sup 0}{sub T}) and {ital anomalous muonium} (Mu{sup 0}{sub BC}): Formation of Mu{sup 0}{sub T} is consistent with {ital epithermal} processes prior to thermalization, while Mu{sup 0}{sub BC} is formed via electron transport to a {ital thermalized} positive muon. The spatial distribution of the excess electrons created in the {mu}{sup +} ionization track is shown to be anisotropic with respect to the muon. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 490203
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 14 Vol. 78; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
DIAMAGNETISM
ELECTRIC FIELDS
ELECTRON BEAMS
MUON SPIN RELAXATION
MUONIUM
SILICON
TEMPERATURE DEPENDENCE
THERMALIZATION
TRIUMF CYCLOTRON