Evidence for muonium passivation in n-doped Ge

Journal Article · Sat Feb 01 04:00:00 EST 1997 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.55.4035· OSTI ID:450412

Kadono, R; Macrae, R M ^[1]; Nishiyama, K ^[2]; Nagamine, K ^[1]

---

1. The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01 (Japan)
2. Meson Science Laboratory, Faculty of Science, University of Tokyo, Tokyo 113 (Japan)

Two different diamagnetic muon states have been identified through their response to bulk electronic excitation in crystalline n-type Ge: one, found above {approximately}100 K, rapidly charge exchanges with photogenerated carriers, while the other, seen at low temperatures, shows little or no such behavior. The electronic inactivity of the latter state (Mu{sup {minus}}, produced by a slow charge-transfer reaction between muonium and an impurity donor atom) further suggests that the electronic level is located outside the energy-band gap, equivalent to {open_quotes}muonium passivation{close_quotes} of the donor. {copyright} {ital 1997} {ital The American Physical Society}

• OSTI ID: 450412
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 7 Vol. 55; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
BAND THEORY
CHARGE TRANSPORT
CRYSTAL DEFECTS
DOPED MATERIALS
ELECTRONIC STRUCTURE
GERMANIUM
MUON-ATOM COLLISIONS
MUONIUM
N-TYPE CONDUCTORS
SPIN-SPIN RELAXATION
THERMAL DIFFUSION