Processing of PbTiO{sub 3} and Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} thin films by novel single-solid-source metalorganic chemical vapor deposition
- New Mexico Inst. of Mining and Technology, Socorro, NM (United States). Dept. of Materials Science and Engineering
- Sandia National Labs., Albuquerque, NM (United States)
Ferroelectric PbTiO{sub 3} (PT) and Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} (PZT) thin films have been deposited on (100) MgO and (111) Pt/SiO{sub 2}/(100)Si substrates by using a novel single-solid-source metalorganic chemical vapor deposition (MOCVD) technique. The new technique uses a powder delivery system to deliver the mixed precursor powders directly into a hot vaporizer from room temperature, therefore, avoiding any problems associated with polymerization or decomposition of the precursors before evaporation. The technique simplifies MOCVD processing significantly and can improve process reliability and reproducibility. The deposited PT and PZT films have a perovskite structure and are highly oriented with respect to the substrate. With improvement of process control, systematic studies of film evolution under various growth conditions have been carried out. Effects of substrate, substrate temperature, system vacuum, and precursor ratios in the mixture on film microstructure and properties will be presented in this paper.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 486173
- Report Number(s):
- SAND--97-1162C; CONF-970302--9; ON: DE97007591
- Country of Publication:
- United States
- Language:
- English
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