Diamond switches for high temperature electronics
Conference
·
OSTI ID:481917
- and others
This paper presents the results of switching voltages of 500 V and currents of 10 A using chemical vapor deposited (CVD) diamond as a switching material. The switching is performed by using an electron beam that penetrates the diamond, creates electron hole pairs, and lowers its resistivity to about 20 {Omega}-cm and its resistance to about 4 {Omega}. Tests were performed at room temperature but in a configuration that allows for 250 C.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- Department of the Air Force, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 481917
- Report Number(s):
- SAND--97-1232C; CONF-970701--1; ON: DE97006363; CNN: Contract F33615-96-C-2689
- Country of Publication:
- United States
- Language:
- English
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