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RADIATION DETECTORS UTILIZING SEMICONDUCTORS

Journal Article · · Denshi Gijutsu (Japan)
OSTI ID:4795536

A semiconductor generates pulses propontional to the energies of the incident particles. Surface barrier type and p-n junction type semiconductors are available. These semiconductor-type detectors are compact and durable, and they do not require high voltages, flow and quenching gases, end-window counters, or photomultipliers. The rising time of the output pulse is very short. Neutrons can be detected by (n, alpha ), (n,p), and (n, gamma ) reactions. Physical theories on the mechanism of semiconductors are discussed. Germanium p- n junction detectors require cooling because of the noise at room temperature. Silicon p-n junction detectors are currently popular. A linear relationship between the pulse-height value and the radiation energy can be maintained with a suitable bias voltage up to 4.5 Mev for protons and 20 Mev for alpha particles. The resolution of alpha particles at 6 Mev is about 0.6%. (OID)

Research Organization:
Originating Research Org. not identified
NSA Number:
NSA-17-000367
OSTI ID:
4795536
Journal Information:
Denshi Gijutsu (Japan), Journal Name: Denshi Gijutsu (Japan) Vol. Vol: 3; ISSN DEGIA
Country of Publication:
Country unknown/Code not available
Language:
English

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