JUNCTION DIODE SEMICONDUCTORS FOR X-AND GAMMA-RAY DOSAGE MEASUREMENT
Journal Article
·
· Radiology (U.S.)
OSTI ID:4790887
Gallium arsenide p-n junctions appear to offer most promise for dosimetry in the diagnostic range. While p-n junctions have excellent electrical properties, they exhibit marked energy dependence. This is aggravated in the test units by the use of gallium arsenide (atomic numbers 3l and 33 respectively). Silicon diodes should greatly reduce this effect; also the employment of drifted lithium junctions of deeper depletion regions should increase the sensitivity to gamma rays. (auth)
- Research Organization:
- Hahnemann Medical Coll., Philadelphia
- NSA Number:
- NSA-16-016556
- OSTI ID:
- 4790887
- Journal Information:
- Radiology (U.S.), Journal Name: Radiology (U.S.) Vol. Vol: 78; ISSN RADLA
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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