Monolithic solar cell and bypass diode system
A protected solar cell system is described comprising: monolithic protected solar cells electrically connected in series. Each monolithic protected solar cell comprises: (a) an underlying layer of n-type gallium arsenide semiconductive material, (b) a layer of p-type gallium arsenide semiconductive material overlying the n-type layer to form a p-n junction solar cell; (c) first and second conductive output means connected to the n-type and p-type layers, respectively; (d) means for isolating a small area of the p-type layer by a recess extending down to the n-type layer; (e) n-type semiconductive material overlying the p-type layer on the small area of p-type material to form a bypass diode; (f) first metallized conducting path means for connecting the n-type material of the bypass diode to the second conductive output means; and (g) second metallized conducting path means connecting the p-type material of the bypass diode to the underlying layer of n-type material.
- Assignee:
- Applied Solar Energy Corp., City of Industry, CA
- Patent Number(s):
- US 4759803
- OSTI ID:
- 6833385
- Resource Relation:
- Patent File Date: Filed date 7 Aug 1987
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDE SOLAR CELLS
JUNCTION DIODES
BYPASSES
DESIGN
P-N JUNCTIONS
DIRECT ENERGY CONVERTERS
EQUIPMENT
JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion