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Title: Monolithic solar cell and bypass diode system

Patent ·
OSTI ID:6833385

A protected solar cell system is described comprising: monolithic protected solar cells electrically connected in series. Each monolithic protected solar cell comprises: (a) an underlying layer of n-type gallium arsenide semiconductive material, (b) a layer of p-type gallium arsenide semiconductive material overlying the n-type layer to form a p-n junction solar cell; (c) first and second conductive output means connected to the n-type and p-type layers, respectively; (d) means for isolating a small area of the p-type layer by a recess extending down to the n-type layer; (e) n-type semiconductive material overlying the p-type layer on the small area of p-type material to form a bypass diode; (f) first metallized conducting path means for connecting the n-type material of the bypass diode to the second conductive output means; and (g) second metallized conducting path means connecting the p-type material of the bypass diode to the underlying layer of n-type material.

Assignee:
Applied Solar Energy Corp., City of Industry, CA
Patent Number(s):
US 4759803
OSTI ID:
6833385
Resource Relation:
Patent File Date: Filed date 7 Aug 1987
Country of Publication:
United States
Language:
English