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LOW TEMPERATURE ANNEALING STAGES OF IRRADIATED COPPER

Journal Article · · Proc. Japan Acad.
OSTI ID:4786980
A mechanism, the principal featare of which is the trapping of interstitial atoms by impurity atoms, is proposed to explain the annealing stages of Cu from about 14 to 473 deg K. (T.F.H.)
Research Organization:
Tokyo Univ.
NSA Number:
NSA-16-016794
OSTI ID:
4786980
Journal Information:
Proc. Japan Acad., Journal Name: Proc. Japan Acad. Vol. Vol: 36
Country of Publication:
Country unknown/Code not available
Language:
English

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