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IMPURITY TRAPPED INTERSTITIALS AND THE LOW TEMPERATURE ANNEALING STAGES OF IRRADIATED COPPER

Journal Article · · J. Phys. Soc. Japan
DOI:https://doi.org/10.1143/JPSJ.15.1807· OSTI ID:4156743
A semiempirical methcd was developed to evaluate interaction energies of close impurity-atom-interstitial pairs. It was found that an undersize impurity atom provides a deep trap for an interstitial, while an oversize impurity atom furnishes to an interstitial several shallow traps with different interaction energies. These results were applied to the annealing temperature problem of frradiated copper. Stage II was interpreted as due to the liberations and annihilations of several kinds of shallowtrapped interstitials, and stage III was explained as due to the liberations and anninilations of deep-trapped interstitials. (auth)
Research Organization:
Univ. of Tokyo
Sponsoring Organization:
USDOE
NSA Number:
NSA-15-001923
OSTI ID:
4156743
Journal Information:
J. Phys. Soc. Japan, Journal Name: J. Phys. Soc. Japan Vol. Vol: 15
Country of Publication:
Country unknown/Code not available
Language:
English

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