THE INFLUENCE OF IMPURITY ATOMS ON THE ANNEALING KINETICS OF NEUTRON IRRADIATED COPPER
Spectroscopically pure copper and a series of dilute binary alloys of copper, containing between 0.02 and l atomic % of silver, cadmium, and beryllium respectively, are neutron-irradiated to doses of between about l0/sup 17/ and 5 x l0/sup 17/ nvt at --196 deg C. A series of isochronal anneals up to +150 deg C are performed and the recovery of the radiation damage is observed by measuring changes of the electrical resistance in liquid helium. Three principal annealing peaks at approximately --140, --60, and 0 deg C, which are superposed upon a continuous annealing up to 0 deg C, are observed for all the specimens. However, the heights and exact temperatures of the peaks vary with impurity concentration and neutron dose. From a study of these variations, together with experimental results obtained on pure copper quenched from high temperatures, it is suggested that the first two peaks are caused by the migration of interstitials from traps, and the third by migration of free vacancies. The nature of these traps is discussed. It is also shown that the details of the annealing processes in beryllium-copper are different from those of the alloys of silver and cadmium. (auth)
- Research Organization:
- Atomic Energy Research Establishment, Harwell, Berks, Eng.
- NSA Number:
- NSA-16-029458
- OSTI ID:
- 4776543
- Report Number(s):
- AERE-R-3843
- Journal Information:
- Phil. Mag., Journal Name: Phil. Mag. Vol. Vol: (8), 7
- Country of Publication:
- United Kingdom
- Language:
- English
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Related Subjects
ANNEALING
BERYLLIUM ALLOYS
CADMIUM ALLOYS
COPPER
COPPER ALLOYS
DEFECTS
DIFFUSION
ELECTRIC CONDUCTIVITY
ENVIRONMENT
HEAT TREATMENTS
IMPURITIES
INTERSTITIALS
IRRADIATION
LABORATORY EQUIPMENT
LATTICES
LOW TEMPERATURE
MEASURED VALUES
METALS, CERAMICS, AND OTHER MATERIALS
NEUTRON BEAMS
OPERATION
PERSONNEL
QUANTITY RATIO
QUENCHING
RADIATION DOSES
RADIATION EFFECTS
REACTOR SAFETY
REACTORS
SILVER ALLOYS
SPECTRA
TEMPERATURE
TESTING
TRAPS
VACANCIES