Avalanche Transistor Circuits

Journal Article · Sun Jan 01 04:00:00 UTC 1961 · Review of Scientific Instruments

DOI:https://doi.org/10.1063/1.1717207· OSTI ID:4786565

Henebry, W. Michael

The evolution of avalanche circuits, which retain the desirable features but which do not suffer from the two defects of the basic avalanche circuit: low duty cycle, and a pulse propagation delay which is dependent upon input, is described. Several transistor types which are suitable for fast avalanche circuits are compared and comments are made about the application of these transistors. Described also are several circuits which may be constructed with avalanche transistor techniques.

• Research Organization: Univ. of Illinois, Urbana
• Sponsoring Organization: USDOE
• NSA Number: NSA-16-013339
• OSTI ID: 4786565
• Journal Information: Review of Scientific Instruments, Journal Name: Review of Scientific Instruments Journal Issue: 11 Vol. 32; ISSN 0034-6748; ISSN RSINAK
• Publisher: American Institute of Physics (AIP)
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

AVALANCHE EFFECT
CIRCUITS
ENGINEERING AND EQUIPMENT
IONIZATION
PULSES
TRANSISTORS