SILICON P-N JUNCTIONS AS CHARGED-PARTICLE DETECTORS

Technical Report · Fri Jan 01 00:00:00 EST 1960

DOI:https://doi.org/10.2172/4778771· OSTI ID:4778771

Gordon, G. E.; Kilian, G. W.; Larsh, A. E.; Sikkeland, T.

Investigations of the electrical response of diffused p-n junctions were made on detectors obtained from two sources. A curve of output-pulse amplitude vs energy for a range of alpha particles from 3.2 to 7.68 Mev was drawn. When the data were corrected for energy loss in the insensitive region, the curve went through the origin. Energies of C/sup 12/ ions and fragments from fission of Cf/ sup 252/ were also plotted vs output-pulse. It was concluded that there is very little or no ionization defect for fission fragments in the solid-state detector. (M.C.G.)

• Research Organization: California Univ., Berkeley, CA (US). Lawrence Radiation Lab.
• DOE Contract Number: W-7405-ENG-48
• NSA Number: NSA-16-029116
• OSTI ID: 4778771
• Report Number(s): UCRL-9052
• Resource Relation: Other Information: Orig. Receipt Date: 31-DEC-62
• Country of Publication: United States
• Language: English

Related Subjects

ENGINEERING AND EQUIPMENT
CALIFORNIUM 252
CARBON 12
CHARGED PARTICLES
DETECTION
ENERGY LEVELS
FISSION PRODUCTS
INSTRUMENTS
LOSSES
PULSES
SEMICONDUCTORS
SILICON