A calibration procedure for the response of silicon surface-barrier detectors to heavy ions
The response of silicon surface-barrier and other semiconductor detectors to heavy ions is complicated by the presence of a pulse-height defect, such that heavy ions produce a smaller pulse height than lighter ions of the same kinetic energy. Based on the results of measurements of this phenomenon with a variety of ions, a new calibration technique for such detectors is proposed. Unlike the widely used calibration technique proposed by Schmitt and co-workers, which assumes the pulse-height response to be linear in both mass and kinetic energy, the present procedure reproduces the observed non-linearities. It is based on separating the energy of the ion into two terms, one of which is strictly proportional to the pulse height and is, in fact, the energy which a light ion, such as an alpha particle, must have to give the same pulse height. The second term is the energy defect of the ion, and is a function of its kinetic energy, mass and atomic number. Applications of the technique to experimental data are presented, including energy and time-of-flight mass measurements of energy-degraded fission fragments, and double-energy measurements of the fissioning systems 235U(n,f) and 252Cf(sf).
- Research Organization:
- Argonne National Lab., IL
- NSA Number:
- NSA-29-018424
- OSTI ID:
- 4346709
- Journal Information:
- Nucl. Instrum. Methods, v. 115, no. 1, pp. 47-55, Other Information: Orig. Receipt Date: 30-JUN-74
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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