RADIATION RESISTANCE OF Al$sub 2$$O$$sub 3$ MOS DEVICES.
Journal Article
·
· IEEE (Inst. Elec. Electron. Eng.) Trans. Electron Devices, ED-16: 333-8(Apr. 1969).
OSTI ID:4754710
- Research Organization:
- RCA Labs., Princeton, N. J.
- NSA Number:
- NSA-23-050233
- OSTI ID:
- 4754710
- Journal Information:
- IEEE (Inst. Elec. Electron. Eng.) Trans. Electron Devices, ED-16: 333-8(Apr. 1969)., Journal Name: IEEE (Inst. Elec. Electron. Eng.) Trans. Electron Devices, ED-16: 333-8(Apr. 1969).
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
RELAXATION PHENOMENA ASSOCIATED WITH RADIATION-INDUCED TRAPPED CHARGE IN Al$sub 2$O$sub 3$ MOS DEVICES.
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Journal Article
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Fri Jan 01 04:00:00 UTC 1971
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Journal Article
·
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OSTI ID:7344081
RADIATION-RESISTANT MOS DEVICES.
Journal Article
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OSTI ID:4801958
Related Subjects
DIODES
DIODES/radiation effects on aluminum oxide MOS
1-MeV electron
ELECTRONS
ELECTRONS/effects of 1-MeV
on aluminum oxide MOS devices
MEV RANGE 01-10
N26500* --Instrumentation--Radiation Effects on Instruments & Instrument Components
RADIATION EFFECTS
SEMICONDUCTORS
TRANSISTORS
TRANSISTORS/ radiation effects on aluminum oxide MOS
1-MeV electron
DIODES/radiation effects on aluminum oxide MOS
1-MeV electron
ELECTRONS
ELECTRONS/effects of 1-MeV
on aluminum oxide MOS devices
MEV RANGE 01-10
N26500* --Instrumentation--Radiation Effects on Instruments & Instrument Components
RADIATION EFFECTS
SEMICONDUCTORS
TRANSISTORS
TRANSISTORS/ radiation effects on aluminum oxide MOS
1-MeV electron