RELAXATION PHENOMENA ASSOCIATED WITH RADIATION-INDUCED TRAPPED CHARGE IN Al$sub 2$$O$$sub 3$ MOS DEVICES.
Journal Article
·
· IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-18: No. 6, 131-7(Dec 1971).
OSTI ID:4693700
- Research Organization:
- RCA Labs., Princeton, N. J.
- NSA Number:
- NSA-26-043126
- OSTI ID:
- 4693700
- Journal Information:
- IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-18: No. 6, 131-7(Dec 1971)., Journal Name: IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-18: No. 6, 131-7(Dec 1971).; ISSN IETNA
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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Related Subjects
ALUMINIUM OXIDES
ELECTRIC CHARGES
MOS TRANSISTORS
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
RADIATION EFFECTS
RELAXATION
SEMICONDUCTOR DEVICES/radioinduced trapped charge in Al$sub 2$O$sub 3$ MOS
relaxation phenomena associated with
TRAPPING
ELECTRIC CHARGES
MOS TRANSISTORS
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
RADIATION EFFECTS
RELAXATION
SEMICONDUCTOR DEVICES/radioinduced trapped charge in Al$sub 2$O$sub 3$ MOS
relaxation phenomena associated with
TRAPPING