MODEL FOR RADIATION-INDUCED CHARGE TRAPPING AND ANNEALING IN THE OXIDE LAYER OF MOS DEVICES.
Journal Article
·
· J. Appl. Phys. 40: 4886-92(Nov 1969).
- Research Organization:
- Sandia Labs., Albuquerque, N. Mex.
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-24-005968
- OSTI ID:
- 4734619
- Journal Information:
- J. Appl. Phys. 40: 4886-92(Nov 1969)., Journal Name: J. Appl. Phys. 40: 4886-92(Nov 1969).
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
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