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Modeling the field and thermal dependence of radiation-induced charge annealing in MOS devices

Journal Article · · IEEE Transactions on Nuclear Science
DOI:https://doi.org/10.1109/23.556838· OSTI ID:443024
; ;  [1];  [2];  [3]
  1. Research Inst. of Scientific Instruments, Moscow (Russian Federation)
  2. Specialized Electronic Systems, Moscow (Russian Federation)
  3. Moscow Engineering Physics Inst. (Russian Federation)
+ Show Author Affiliations
Modeling of the field and thermal dependencies of radiation-induced charge annealing, based on the assumption that the energy level of defects in the oxide located within the Si forbidden gap, is described and verified. A novel conception of thermoactivated nature of tunneling exchange between the defects and Si substrate is proposed.
OSTI ID:
443024
Report Number(s):
CONF-960773--
Journal Information:
IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6 Vol. 43; ISSN 0018-9499; ISSN IETNAE
Country of Publication:
United States
Language:
English

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Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ANNEALING
CRYSTAL DEFECTS
MATHEMATICAL MODELS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SILICON
SILICON OXIDES