Evaluation and Vacuum Stability Tests of Silicon Radiation Detectors

Journal Article · Tue Jan 01 04:00:00 EST 1963 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/TNS.1963.4323262· OSTI ID:4744766

Weiss, W. L.

Tests are carried out on silicon radiation detectors of both diffused- junction and surface-barrier types. Measurements are made of reverse current and rms noise level as a function of applied bias voltage in air and vacuum, alpha particle pulse height and energy resolution, and thickness of the sensitive surface dead layer. Long-term stability is evaluated for samples in air and in vacuum by periodic measurements of reverse current, rms noise voltage, and pulse height and energy resolution for 5.8-Mev alpha particles. The samples in the vacuum tests are maintained at rated bias voltage and a pressure of approximately 10^-6 Torr continuously for a period of six months. Only minor changes are observed in the performance characteristics of the devices.

• Research Organization: Oak Ridge Technical Enterprises Corp., Tenn.
• Sponsoring Organization: USDOE
• NSA Number: NSA-17-016896
• OSTI ID: 4744766
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 1 Vol. 10; ISSN 0018-9499
• Publisher: Institute of Electrical and Electronics Engineers (IEEE)
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS
AIR
ALPHA PARTICLES
BACKGROUND
BARRIERS
CURRENTS
ELECTRIC POTENTIAL
ENERGY
ENERGY RANGE
LAYERS
MEASURED VALUES
PERFORMANCE
PULSE ANALYZERS
RADIATION DETECTORS
RESOLUTION
SEMICONDUCTORS
SENSITIVITY
SILICON
STABILITY
SURFACES
THICKNESS
VACUUM