FAST NEUTRON DAMAGE TO SILICON JUNCTION PARTICLE DETECTORS

Journal Article · Sun Jan 01 04:00:00 EST 1961 · IRE Trans. Nuclear Sci.

DOI:https://doi.org/10.1109/TNS2.1961.4315806· OSTI ID:4099779

Babcock, R V

Two silicon junction charged-particle detectors were irradiated with fast neutrons distributed in energy from 0.5 to 6 Mev. Reverse current and pulse- height spectra of U/sup 234/ alpha particles were observed at several bias voltages as functions of neutron dosage. The reverse current of both detectors increased roughly five fold during exposure to 1.2 X 10/sup 13/ fast neutrons/cm/ sup 2/. From the alpha pulse heights the capacitance (at some fixed bias) of one detector was found to increase roughly 25% per 10/sup 12/ nvt. Approximately 50% of this change was restored by 1000 hr of annealing at room temperature. In the other detector, the alpha pulse height decreased at a similar rate, but the data were obscured by the development of unusually large pulse rise times. (auth)

• Research Organization: Westinghouse Electric Corp., East Pittsburgh
• Sponsoring Organization: USDOE
• NSA Number: NSA-15-009089
• OSTI ID: 4099779
• Journal Information: IRE Trans. Nuclear Sci., Journal Name: IRE Trans. Nuclear Sci. Vol. Vol: NS-8: No. 1
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

CHARGED PARTICLES
ELECTRIC POTENTIAL
ENERGY
ENGINEERING AND EQUIPMENT
FAST NEUTRONS
NEUTRONS
PULSES
RADIATION DETECTORS
RADIATION DOSES
SILICON
SPECTRA
TRANSIENTS