Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

ELECTRON RADIATION DAMAGE EFFECTS IN SILICON SURFACE-BARRIER DETECTORS.

Journal Article · · IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-18: No. 1, 192-9(Feb 1971).
;
Research Organization:
National Bureau of Standards, Washington, D. C.
Sponsoring Organization:
USDOE
NSA Number:
NSA-25-057907
OSTI ID:
4739431
Journal Information:
IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-18: No. 1, 192-9(Feb 1971)., Journal Name: IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci. NS-18: No. 1, 192-9(Feb 1971).
Country of Publication:
Country unknown/Code not available
Language:
English

Similar Records

Radiation damage effects on silicon surface barrier nuclear detectors
Journal Article · Wed Feb 28 23:00:00 EST 1973 · Jap. J. Appl. Phys., v. 12, no. 3, pp. 439-444 · OSTI ID:4455808
Radiation damages in silicon surface barrier detectors with 0.5 to 1.5 MeV electrons.
Journal Article · Fri Dec 31 23:00:00 EST 1971 · Mem. Chubu Inst. Technol. 8: 143-152(Dec 1972). · OSTI ID:4528649
Damage effects in silicon surface barrier detectors by 0.5 to 1.5-MeV electrons
Journal Article · Mon Oct 01 00:00:00 EDT 1973 · Jap. J. Appl. Phys., v. 12, no. 10, pp. 1493-1499 · OSTI ID:4405798

Related Subjects

ALPHA PARTICLES
COUNTING RATES
ELECTRON BEAMS
ELECTRONS/effects on silicon surface-barrier detectors at 200 keV to 1 MeV
IRRADIATION
KEV RANGE 100-1000
LEAKAGE CURRENT
N26110 --Instrumentation--Radiation Detection Instruments--General Detectors & Monitors
N26500* --Instrumentation--Radiation Effects on Instruments & Instrument Components
NOISE
PERFORMANCE
RADIATION DETECTORS
SEMICONDUCTOR (SILICON)/radiation effects on surface-barrier
200-keV to 1-MeV electron
RADIATION EFFECTS
SEMICONDUCTOR COUNTERS
SILICON
SURFACE-BARRIER DETECTORS