Damage effects in silicon surface barrier detectors by 0.5 to 1.5-MeV electrons

Journal Article · Mon Oct 01 04:00:00 EDT 1973 · Jap. J. Appl. Phys., v. 12, no. 10, pp. 1493-1499

DOI:https://doi.org/10.1143/JJAP.12.1493· OSTI ID:4405798

Nakamoto, S; Kawabata, K; Norisawa, K; Sakisaka, M

The effects of radiation induced defects on the property of silicon surface barrier detectors were investigated. Experiments on current-voltage and capacitance-voltage characteristics were carried out with the following results: (I) the introduction rate of the defects was proportional to the square of the energy of incident electrons, and (2) the extension of depletion layer thickness was recognized as a function of electron flux. The effect on detector property is discussed in terms of trapping effects of excess carriers induced by alpha and beta rays. lt is concluded that divacancies which act as acceptors in n-type silicon are most likely defects to explain the experimentl observations. (auth)

• Research Organization: Chubu Inst. of Tech., Kasugai, Japan
• NSA Number: NSA-29-010287
• OSTI ID: 4405798
• Journal Information: Jap. J. Appl. Phys., v. 12, no. 10, pp. 1493-1499, Journal Name: Jap. J. Appl. Phys., v. 12, no. 10, pp. 1493-1499; ISSN JJAPA
• Country of Publication: Japan
• Language: English

Related Subjects

*SI SEMICONDUCTOR DETECTORS-- PHYSICAL RADIATION EFFECTS
*SURFACE BARRIER DETECTORS-- PHYSICAL RADIATION EFFECTS
ALPHA PARTICLES
BETA PARTICLES
ELECTRICAL PROPERTIES
ELECTRONS
KEV RANGE 100-1000
MEV RANGE 01-10
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
TRAPPING
VACANCIES