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Radiation damages in silicon surface barrier detectors with 0.5 to 1.5 MeV electrons.

Journal Article · · Mem. Chubu Inst. Technol. 8: 143-152(Dec 1972).
OSTI ID:4528649
Research Organization:
Originating Research Org. not identified
NSA Number:
NSA-27-027753
OSTI ID:
4528649
Journal Information:
Mem. Chubu Inst. Technol. 8: 143-152(Dec 1972)., Journal Name: Mem. Chubu Inst. Technol. 8: 143-152(Dec 1972).
Country of Publication:
Country unknown/Code not available
Language:
English

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Related Subjects

ANNEALING
ELECTRONS
ELECTRONS/effects on silicon surface-barrier detectors at 0.5 to 1.5 MeV
HIGH TEMPERATURE
MEV RANGE 01-10
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
PHYSICAL RADIATION EFFECTS
RADIATION DETECTORS
SEMICONDUCTOR (SILICON)/radiation damage in surface-barrier
electron
SI SEMICONDUCTOR DETECTORS
SURFACE BARRIER DETECTORS