Damage effects in silicon surface barrier detectors with 0.5 to 2 MeV protons
Journal Article
·
· Jap. J. Appl. Phys., v. 13, no. 3, pp. 524-528
- Research Organization:
- Chubu Inst. of Tech., Kasugai, Aichi, Japan
- NSA Number:
- NSA-30-032285
- OSTI ID:
- 4285441
- Journal Information:
- Jap. J. Appl. Phys., v. 13, no. 3, pp. 524-528, Journal Name: Jap. J. Appl. Phys., v. 13, no. 3, pp. 524-528; ISSN JJAPA
- Country of Publication:
- Japan
- Language:
- English
Similar Records
Damage effects in silicon surface barrier detectors by 0.5 to 1.5-MeV electrons
RADIATION DAMAGE EFFECTS FROM 2 MeV PROTONS IN SILICON SURFACE BARRIER DETECTORS.
EFFECTS OF DAMAGE BY 0.8 MeV TO 5.0 MeV PROTONS IN SILICON SURFACE-BARRIER DETECTORS.
Journal Article
·
Mon Oct 01 00:00:00 EDT 1973
· Jap. J. Appl. Phys., v. 12, no. 10, pp. 1493-1499
·
OSTI ID:4405798
RADIATION DAMAGE EFFECTS FROM 2 MeV PROTONS IN SILICON SURFACE BARRIER DETECTORS.
Journal Article
·
Fri Dec 31 23:00:00 EST 1971
· Nucl. Instrum. Methods 101: No. 1, 97-105(1972).
·
OSTI ID:4648395
EFFECTS OF DAMAGE BY 0.8 MeV TO 5.0 MeV PROTONS IN SILICON SURFACE-BARRIER DETECTORS.
Journal Article
·
Sun Dec 31 23:00:00 EST 1967
· IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-15: No. 3, 363-72(June 1968).
·
OSTI ID:4509815
Related Subjects
*SI SEMICONDUCTOR DETECTORS-- PHYSICAL RADIATION EFFECTS
CAPACITORS
CRYSTAL DEFECTS
IRRADIATION
LEAKAGE CURRENT
MONOCRYSTALS
N46110 --Instrumentation--Radiation Detection Instruments--General Detectors & Monitors
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
PROTONS
SILICON
SURFACE BARRIER DETECTORS
CAPACITORS
CRYSTAL DEFECTS
IRRADIATION
LEAKAGE CURRENT
MONOCRYSTALS
N46110 --Instrumentation--Radiation Detection Instruments--General Detectors & Monitors
N46300* --Instrumentation--Radiation Effects on Instrument Components
Instruments
or Electronic Systems
PROTONS
SILICON
SURFACE BARRIER DETECTORS