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EFFECTS OF DAMAGE BY 0.8 MeV TO 5.0 MeV PROTONS IN SILICON SURFACE-BARRIER DETECTORS.

Journal Article · · IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-15: No. 3, 363-72(June 1968).
; ; ;
Research Organization:
National Bureau of Standards, Washington, D. C.
Sponsoring Organization:
USDOE
NSA Number:
NSA-22-040512
OSTI ID:
4509815
Journal Information:
IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-15: No. 3, 363-72(June 1968)., Journal Name: IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-15: No. 3, 363-72(June 1968).
Country of Publication:
Country unknown/Code not available
Language:
English

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Related Subjects

KEV RANGE
MEV RANGE
N26500* --Instrumentation--Radiation Effects on Instruments & Instrument Components
PERFORMANCE
PROTONS/effects of 0.8- to 5.0-MeV
on performance of surface-barrier silicon detectors
RADIATION DETECTORS
SEMICONDUCTOR (SILICON)/ radiation effects on performance of surface-barrier
0.8- to 5.0-MeV proton
RADIATION EFFECTS
SEMICONDUCTOR COUNTERS
SEMICONDUCTORS
SILICON
SOLID-STATE COUNTERS
SURFACE-BARRIER DETECTORS
SURFACE-BARRIER TRANSISTORS
TRANSISTORS