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EFFECTS OF DAMAGE BY 0.8 MeV--5.0 MeV PROTONS IN SILICON SURFACE-BARRIER DETECTORS.

Technical Report ·
OSTI ID:4835363
; ; ;
Research Organization:
National Aeronautics and Space Administration, Greenbelt, Md. Goddard Space Flight Center
NSA Number:
NSA-23-000758
OSTI ID:
4835363
Report Number(s):
N--68-27456; NASA-TM-X--63242; X--611-68-221
Country of Publication:
Country unknown/Code not available
Language:
English

Similar Records

EFFECTS OF DAMAGE BY 0.8 MeV TO 5.0 MeV PROTONS IN SILICON SURFACE-BARRIER DETECTORS.
Journal Article · Sun Dec 31 23:00:00 EST 1967 · IEEE (Inst. Elec. Electron. Eng.), Trans. Nucl. Sci., NS-15: No. 3, 363-72(June 1968). · OSTI ID:4509815
LOW-ENERGY PROTON DAMAGE EFFECTS IN SILICON SURFACE-BARRIER DETECTORS.
Technical Report · Sat Dec 31 23:00:00 EST 1966 · OSTI ID:4520100
HIGH-ENERGY PROTON DAMAGE IN SILICON SURFACE-BARRIER DETECTORS.
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Related Subjects

KEV RANGE
MEV RANGE
N26500* --Instrumentation--Radiation Effects on Instruments & Instrument Components
PERFORMANCE
PROTONS
PROTONS/ effects of 0.8- to 5.0-MeV
on performance of silicon surface-barrier detectors
RADIATION DETECTORS
SEMICONDUCTOR (SILICON)/radiation effects on performance of surface-barrier
0.8- to 5.0-MeV proton
RADIATION EFFECTS
SEMICONDUCTORS
SILICON
SOLID-STATE COUNTERS
SURFACE-BARRIER DETECTORS