ANALYSIS OF TRANSISTOR FAILURE IN A NUCLEAR ENVIRONMENT
Journal Article
·
· IEEE (Inst. Elec. Electron. Engrs.) Trans. Nucl. Sci.
A method is described for predicting transistor reliability as a function of nuclear radiation exposure, by the use of a given distribution. Graphical plots of seven different types of transistors show a-c gain degradation as a function of integrated neutron exposure. The plots are extended to include probability of failure to 0.1 and 0.01 per cent. The graphs are interpreted and the plotting technique and assumptions for extrapolation of the distribution used are discussed. (auth)
- Research Organization:
- Bendix Corp., Southfield, Detroit
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-17-016882
- OSTI ID:
- 4723443
- Journal Information:
- IEEE (Inst. Elec. Electron. Engrs.) Trans. Nucl. Sci., Journal Name: IEEE (Inst. Elec. Electron. Engrs.) Trans. Nucl. Sci. Vol. Vol: NS- 10
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
EFFECTS OF GAMMA RADIATION ON A TRANSISTOR RC PHASE-SHIFT OSCILLATOR
Extensions of models for transistor failure probability due to neutron fluence
Extensions of models for transistor failure probability due to neutron fluence. Technical report
Technical Report
·
Sun May 01 00:00:00 EDT 1960
·
OSTI ID:4094245
Extensions of models for transistor failure probability due to neutron fluence
Conference
·
Wed Nov 30 23:00:00 EST 1977
· IEEE Trans. Nucl. Sci.; (United States)
·
OSTI ID:6778772
Extensions of models for transistor failure probability due to neutron fluence. Technical report
Technical Report
·
Fri Mar 31 23:00:00 EST 1978
·
OSTI ID:6757119