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Extensions of models for transistor failure probability due to neutron fluence

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:6778772
;

Models developed in the Hardening Options for Neutron effects (HONE) program for predicting transistor failure probability are extended to include probability distributions for the initial current gains and to allow non-zero origins for all random variables concerned. Further, these models are generalized to consider two-transistor combinations. Test cases are calculated to compare the failure probability curves generated by these models with previous results.

Research Organization:
Harry Diamond Labs., Adelphi, MD
OSTI ID:
6778772
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-24:6; ISSN IETNA
Country of Publication:
United States
Language:
English

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Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
FAILURES
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
PROBABILITY
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES