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EFFECTS OF GAMMA RADIATION ON A TRANSISTOR RC PHASE-SHIFT OSCILLATOR

Technical Report ·
OSTI ID:4094245

An investigation was conducted of a transistor RC phaseshift oscillator in operation in a 1000-curie Co/sup 6//sup 0/ gammaray environment. A total of seven identical oscillator circuits were irradiated producing changes in the transistor hybrid parameters, in circuit output voltage, and in frequency as a function of dosage. Failure analysis graphs show the prabability of derated frequency and derated output voltage for the circuit, and derated current gain for the transistor. (auth)

Research Organization:
Lockheed Aircraft Corp. Missiles and Space Div., Sunnyvale, Calif.
NSA Number:
NSA-15-019944
OSTI ID:
4094245
Report Number(s):
LMSD-288123
Country of Publication:
Country unknown/Code not available
Language:
English

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