PRODUCTION OF THICK SEMICONDUCTOR RADIATION DETECTORS BY LITHIUM DRIFTING

Journal Article · Tue Jan 01 04:00:00 EST 1963 · IEEE (Inst. Elec. Electron. Engrs.) Trans. Nucl. Sci.

DOI:https://doi.org/10.1109/TNS.1963.4323264· OSTI ID:4723272

Miller, G L; Pate, B D; Wagner, S

The application of semiconductor junction radiation detectors to penetrating radiation depends on the production of devices having thick depletion layers. In this connection the lithium drift technique can be employed with success. A difficulty encountered with this method is the long time required to produce compensated regions a few millimeters or more in thickness. However, it can be shown that the compensated region produced by drifting at constant temperature is proportional to the cube root of the total energy dissipated in the drifting process. This finding indicates the importance of operating at the highest attainable power at all times, and leads to the design of a system employing a fluorocarbon liquid as a vapor-phase coolant in conjunction with a pulsed constant-wattage supply. High drift rates are achieved with this technique, which has the advantage of being suited to the simultaneous drifting of a number of detectors at constant power from a single power supply. (auth)

• Research Organization: Brookhaven National Lab., Upton, N.Y.
• Sponsoring Organization: USDOE
• NSA Number: NSA-17-016898
• OSTI ID: 4723272
• Report Number(s): BNL-6469
• Journal Information: IEEE (Inst. Elec. Electron. Engrs.) Trans. Nucl. Sci., Journal Name: IEEE (Inst. Elec. Electron. Engrs.) Trans. Nucl. Sci. Vol. Vol: NS- 10
• Country of Publication: United States
• Language: English

Related Subjects

COOLING
ENERGY
LAYERS
LIQUIDS
LITHIUM
ORGANIC FLUORINE COMPOUNDS
PHYSICS
PLANNING
POWER
PRODUCTION
PULSES
RADIATION DETECTORS
SEMICONDUCTORS
THICKNESS
VAPORS