Choice of the optimal drift modes of lithium ions in silicon in fabricating radiation detectors
Journal Article
·
· Instrum. Exp. Tech. (USSR) (Engl. Transl.), v. 16, no. 4, pp. 1265- 1267
OSTI ID:4348290
In order to determine the optimal drift modes of Li ions and to determine the thickness of the compensated region for stipulated drift modes, more refined nomograms are proposed for the design of Si(Li) detectors. (auth)
- Research Organization:
- Originating Research Org. not identified
- NSA Number:
- NSA-29-020941
- OSTI ID:
- 4348290
- Journal Information:
- Instrum. Exp. Tech. (USSR) (Engl. Transl.), v. 16, no. 4, pp. 1265- 1267, Journal Name: Instrum. Exp. Tech. (USSR) (Engl. Transl.), v. 16, no. 4, pp. 1265- 1267; ISSN INETA
- Country of Publication:
- Country unknown/Code not available
- Language:
- English
Similar Records
A LITHIUM-DRIFTED SILICON SURFACE-BARRIER DETECTOR FOR NUCLEAR RADIATIONS
PRODUCTION OF THICK SEMICONDUCTOR RADIATION DETECTORS BY LITHIUM DRIFTING
ON THE DESIGN OF A SILICON JUNCTION RADIATION DETECTOR MADE BY ION DRIFT
Journal Article
·
Tue Dec 31 23:00:00 EST 1963
· Nucl. Instr. Methods
·
OSTI ID:4016219
PRODUCTION OF THICK SEMICONDUCTOR RADIATION DETECTORS BY LITHIUM DRIFTING
Journal Article
·
Mon Dec 31 23:00:00 EST 1962
· IEEE (Inst. Elec. Electron. Engrs.) Trans. Nucl. Sci.
·
OSTI ID:4723272
ON THE DESIGN OF A SILICON JUNCTION RADIATION DETECTOR MADE BY ION DRIFT
Journal Article
·
Sun Jul 01 00:00:00 EDT 1962
· Nuclear Instr. & Methods
·
OSTI ID:4764579