A SEMICONDUCTOR MONITOR FOR NUCLEAR RADIATIONS

Journal Article · Fri Mar 01 04:00:00 EST 1963 · Nucl. Instr. Methods

DOI:https://doi.org/10.1016/0029-554X(63)90244-1· OSTI ID:4722393

Moncaster, M E; Northrop, D C; Raines, J A

A method is described of making encapsulated p-n junction radiation counters from high resistivity p-type silicon. They can be used to monitor alpha, beta, and gamma rays, with discrimination in mixed fluxes, and are sufficiently robust and reliable for use in general purpose equipment. A portable transistorized indicator unit was designed for use with these counters incorporating a loudspeaker output and logarithmic ratemeter. The counting threshold of the instrument is reached when 70 kev is absorbed in the depletion layer of the junction, so that all charged particles above this energy are counted. Gamma rays give Compton interactions only, with a sensitivity of about 1 mr/hr for Co/sup 60/ gammas. The energy response of the instrument over a range of gamma photon energies has not yet been determined. (auth)

• Research Organization: Services Electronics Research Lab., Baldock, Herts, Eng.
• NSA Number: NSA-17-023784
• OSTI ID: 4722393
• Journal Information: Nucl. Instr. Methods, Journal Name: Nucl. Instr. Methods Vol. Vol: 22
• Country of Publication: Country unknown/Code not available
• Language: English

Related Subjects

ABSORPTION
ALPHA PARTICLES
CHARGED PARTICLES
COBALT 60
COMPTON EFFECT
ELECTRIC CONDUCTIVITY
ENERGY
GAMMA RADIATION
INSTRUMENTS AND INSTRUMENTATION
INTERACTIONS
MONITORING
PHOTONS
PLANNING
RADIATIONS
SEMICONDUCTORS
SENSITIVITY
SILICON