Amorphous silicon/crystalline silicon heterojunctions for nuclear radiation detector applications

Conference · Tue Oct 01 04:00:00 EDT 1996

OSTI ID:469089

Walton, J T; Hong, W S; Luke, P N; Wang, N W ^[1]; Ziemba, F P ^[2]

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1. Lawrence Berkeley National Lab., CA (United States)
2. Quantrad Sensor, Inc., Santa Clara, CA (United States)

Results on characterization of electrical properties of amorphous Si films for the 3 different growth methods (RF sputtering, PECVD [plasma enhanced], LPCVD [low pressure]) are reported. Performance of these a-Si films as heterojunctions on high resistivity p-type and n- type crystalline Si is examined by measuring the noise, leakage current, and the alpha particle response of 5mm dia detector structures. It is demonstrated that heterojunction detectors formed by RF sputtered films and PECVD films are comparable in performance with conventional surface barrier detectors. Results indicate that the a-Si/c-Si heterojunctions have the potential to greatly simplify detector fabrication. Directions for future avenues of nuclear particle detector development are indicated.

• Research Organization: Lawrence Berkeley National Lab., CA (United States)
• Sponsoring Organization: USDOE Office of Energy Research, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 469089
• Report Number(s): LBNL--39508; CONF-9611110--4; ON: DE97004134
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
AMORPHOUS STATE
ELECTRIC CONTACTS
ELECTRICAL PROPERTIES
FILMS
HETEROJUNCTIONS
SEMICONDUCTOR DETECTORS
SI SEMICONDUCTOR DETECTORS