Correlation of film stress and the mechanical response of Au thin films
- North Carolina State Univ., Raleigh, NC (United States)
- Sandia National Labs., Albuquerque, NM (United States)
The investigation of the mechanical properties of nanostructured materials is critical to the continuing development of thin film technology. For example, the semiconductor industry must understand how stress and strain effect the electronic properties of superlattices and cause the delamination of metal interconnect films. A variety of nano-indentation techniques have been developed as tools to investigate the mechanical behavior of thin films. In a previous study the interfacial force microscope (IFM) was used to survey the mechanical response of 200nm thick Au films deposited on various substrates under various deposition conditions. By combining the methods of contact mechanics and classic indentation techniques, quantitative investigations of the effective elastic modulus and the maximum shear-stress at the plastic threshold were tabulated. The results indicated a large variation in these parameters for the various film/substrates, while the values were consistent over a single film/substrate. The observed variation could be explained by several factors: differences in the films` morphology, adhesion to the substrate, or residual stress. In this paper we describe an investigation of the mechanical response of similar Au thin films as a function of residual and imposed film stress.
- OSTI ID:
- 468925
- Report Number(s):
- CONF-960877-; TRN: 97:001308-0183
- Resource Relation:
- Conference: Microscopy and microanalysis 1996, Minneapolis, MN (United States), 11-15 Aug 1996; Other Information: PBD: 1996; Related Information: Is Part Of Microscopy and microanalysis 1996; Bailey, G.W.; Corbett, J.M.; Dimlich, R.V.W.; Michael, J.R.; Zaluzec, N.J. [eds.]; PB: 1107 p.
- Country of Publication:
- United States
- Language:
- English
Similar Records
Nanomechanics of hard films on compliant substrates.
Near-plastic threshold indentation and the residual stress in thin films